feb.1999 mitsubishi semiconductor triac ? BCR16HM medium power use insulated type, glass passivation type ?i t (rms) ...................................................................... 16a ?v drm ..............................................................400v/600v ?i fgt ! , i rgt ! , i rgt # ........................................... 30ma ?v iso ........................................................................ 2200v ? ul recognized: file no. e80276 BCR16HM application contactless ac switches, light dimmer, on/off and speed control of small induction motors, on/off control of copier lamps, microwave ovens symbol i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg v iso parameter rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature mounting torque weight isolation voltage conditions commercial frequency, sine full wave, 360 conduction, t b =82 c 60hz sinewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current screw m4 t a =25 c, ac 1 minute, t 2 t 1 g terminal to base unit a a a 2 s w w v a c c kgcm nm g v ratings 16 170 121 5 0.5 10 2 C40 ~ +125 C40 ~ +125 15 1.47 26 2200 ] 1. gate open. symbol v drm v dsm parameter repetitive peak off-state voltage ] 1 non-repetitive peak off-state voltage ] 1 voltage class unit v v maximum ratings 8 400 500 12 600 720 20.2 max 39.2 max 2- f 4.2 2 5.0 min 20.1 max 1 3 21.6 max 30.0?.2 23.0max 2 1 3 7.0 7.0 f 1.55(g) 8.25 6.35 f 2.0(t 1 ,t 2 ) 7.95 1.5 t 1 terminal indication trademark 3- f 1.3 type name tb test point lot no. 2.6 6.35 9.75 voltage class 11 max 22.5 max gate terminal indication * outline drawing dimensions in mm BCR16HM (c type) 1
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t 1 terminal t 2 terminal gate terminal
feb.1999 10 0 23 5710 1 80 60 40 20 23 5710 2 44 100 120 140 160 180 200 0 4.4 2.4 0.8 0.4 1.2 1.6 2.0 2.8 3.2 3.6 4.0 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 t b = 25? maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) ] 2. measurement using the gate trigger characteristics measurement circuit. ] 3. the critical-rate of rise of the off-state commutating voltage is shown in the table below. ] 4. the contact thermal resistance r th (b-f) in case of greasing is 0.5 c/w. mitsubishi semiconductor triac ? BCR16HM medium power use insulated type, glass passivation type symbol i drm v tm v fgt ! v rgt ! v rgt # i fgt ! i rgt ! i rgt # v gd r th (j-b) (dv/dt) c parameter repetitive peak off-state current on-state voltage gate trigger voltage ] 2 gate trigger current ] 2 gate non-trigger voltage thermal resistance critical-rate of rise of off-state commutating voltage test conditions t j =125 c, v drm applied t b =25 c, i tm =25a, instantaneous measurement t j =25 c, v d =6v, r l =6 w , r g =330 w t j =25 c, v d =6v, r l =6 w , r g =330 w t j =125 c, v d =1/2v drm junction to base ] 4 unit ma v v v v ma ma ma v c/w v/ m s typ. ! @ # ! @ # electrical characteristics test conditions voltage class 8 12 v drm (v) 400 600 min. 10 10 commutating voltage and current waveforms (inductive load) (dv/dt) c symbol r l r l unit v/ m s 1. junction temperature t j =125 c 2. rate of decay of on-state commutat- ing current (di/dt) c =C8a/ms 3. peak off-state voltage v d =400v limits min. 0.2 ] 3 max. 3.0 1.6 1.5 1.5 1.5 30 30 30 2.0 supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c performance curves
feb.1999 10 0 23 10 1 5710 2 23 5710 3 23 5710 4 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 ? v gt = 1.5v v gm = 10v i fgt i, i rgt i, i rgt iii v gd = 0.2v p g(av) = 0.5w p gm = 5w i gm = 2a 0.4 0.8 23 10 ? 5710 0 23 5710 1 23 5710 2 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 23 10 2 5710 3 0 10 1 10 3 7 5 3 2 ?0 ?0 20 10 2 7 5 3 2 60 100 140 4 4 ?0 0 40 80 120 typical example 10 1 10 3 7 5 3 2 ?0 ?0 20 10 2 7 5 3 2 60 100 140 4 4 ?0 0 40 80 120 typical example 10 12 10 8 40 30 25 15 5 0 20 0 20 35 24 6141618 360 conduction resistive, inductive loads 40 12 10 8 160 120 100 60 20 0 20 0 80 140 24 6141618 curves apply regardless of conduction angle 360 conduction resistive, inductive loads maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) allowable base temperature vs. rms on-state current base temperature (?) rms on-state current (a) maximum transient thermal impedance characteristics (junction to case) transient thermal impedance (?/ w) conduction time (cycles at 60hz) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature (?) gate trigger voltage vs. junction temperature junction temperature (?) gate characteristics 100 (%) gate trigger current (t j = t?) gate trigger current (t j = 25?) 100 (%) gate trigger voltage ( t j = t c ) gate trigger voltage ( t j = 25 ? ) mitsubishi semiconductor triac ? BCR16HM medium power use insulated type, glass passivation type
feb.1999 10 3 7 5 3 2 ?0 ?0 20 10 2 7 5 3 2 60 100 140 4 4 ?0 0 40 80 120 10 1 typical example 160 100 80 40 20 0 140 40 ?0 ?0 ?0 0 20 60 80 140 100120 60 120 typical example 140 40 ?0 ?0 ?0 0 20 60 80 100 120 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 10 2 typical example allowable ambient temperature vs. rms on-state current ambient temperature (?) rms on-state current (a) repetitive peak off-state current vs. junction temperature junction temperature (?) breakover voltage vs. junction temperature junction temperature (?) holding current vs. junction temperature junction temperature (?) 40 12 10 8 160 120 100 60 20 0 20 0 80 140 24 6141618 80 80 t2.0 160 160 t4.0 120 120 t3.0 all fins are black painted aluminum and greased natural convection curves apply regardless of conduction angle commutation characteristics critical rate of rise of off-state commutating voltage (v/?) rate of decay of on-state commutating current (a /ms) breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/?) 100 (%) breakover voltage ( dv/dt = xv/? ) breakover voltage ( dv/dt = 1v/? ) 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 # 2 # 1 typical example t j = 125? i quadrant iii quadrant 10 0 10 2 7 5 3 2 10 0 23 5710 1 10 1 7 5 3 2 23 5710 2 4 4 44 typical example t c = 125? i t = 4a t = 500? v d = 200v f = 3hz i quadrant iii quadrant minimum charac- teristics value 100 (%) holding current ( t j = t c ) holding current ( t j = 25 ? ) 100 (%) repetitive peak off-state current ( t j = t c ) repetitive peak off-state current ( t j = 25 ? ) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 ? ) mitsubishi semiconductor triac ? BCR16HM medium power use insulated type, glass passivation type
feb.1999 gate trigger current vs. gate current pulse width gate current pulse width (?) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) 10 1 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 4 4 44 i fgt i i rgt i i rgt iii typical example mitsubishi semiconductor triac ? BCR16HM medium power use insulated type, glass passivation type 6 w 6 w 6 w 6v 6v 6v r g r g r g a v a v a v test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits
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